Characterization of oxide scales thermally formed on single-crystal silicon carbide.

Effect of increasing corundum on mechanical properties of silicon carbide refractories

Oxide materials such as Al2O corundum has a great influence on the mechanical and oxidation properties of refractory or refractory materials. In this paper, the effect of Al2O3 powder density, apparent porosity, linear shrinkage, and oxidation resistance of SiC composite refractory materials is investigated. Meanwhile, the compressive and flexural strengths were investigated before and after he...

Finite Element Modeling of the Vibrational Behavior of Single-Walled Silicon Carbide Nanotube/Polymer Nanocomposites

The multi-scale finite element method is used to study the vibrational characteristics of polymer matrix reinforced by single-walled silicon carbide nanotubes. For this purpose, the nanoscale finite element method is employed to simulate the nanotubes at the nanoscale. While, the polymer is considered as a continuum at the larger scale. The polymer nanotube interphase is simulated by spring ele...

Mae pro O F Co Py [ 013 ] 013503 M Ae

We have demonstrated the ability to perform a ductile material removal operation, via single-point diamond turning, on single-crystal silicon carbide (6H). To our knowledge, this is the first reported work on the ductile machining of single-crystal silicon carbide (SiC). SiC experiences a ductile-to-brittle transition similar to other nominally brittle materials such as silicon, germanium, and ...

Fabrication and Characterization of High Frequency Phased Arrays for NDE Imaging

PMN-PT single crystal 1-3 composite high frequency phased arrays with center frequency of 35 MHz were fabricated and characterized for silicon carbide (SiC) NDE imaging applications. The 35 MHz 64-element array was successfully prototyped using PMN-PT single crystal and PC-MUT technology. The broad bandwidth > 90% and high sensitivity (echo amplitude > 500 mV from the impulse response with 0 ga...

Effect of oxygen and nitrogen interactions on friction of single-crystal silicon carbide